Ideal diode equation

What is the diode current for a forward bias of 0.6 V? I D=0.7×10 −12(e0.6/0.026−1) I D=7mA Lundstrom ECE 305 S15 outline 28 1) Review 2) Ideal diode equation (long base) 3) Ideal diode equation (short base) 4) Discussion 5) A Primer Solar Cells Lundstrom ECE 305 S15

Ideal diode equation predicts diode current approaches the saturation current as V D gets much smaller than the thermal voltage. Law of the junction still holds and predicts concentration of minority carriers at depletion-region approaches 0 under sufficient reverse bias.Strictly speaking, the diode equation can only be inverted to give V = V(T) when one can assume that the non-ideality factor is voltage-independent. Maybe the deviations from ideal behavior in the IV-curve are not only due to a varying non-ideality factor, but also due to self-heating of the diode during measurement. Ideas for future measurements12 Des 2018 ... − Characteristics of an ideal -junction diode. Electronics I. Physics Department. Dr. Emad Aljaberi. College of Science. Page 4 ...The effect of light on the current-voltage characteristics of a p-junction. The equation for the IV curve in the first quadrant is: I = I L − I 0 exp ( q V n k T) - 1. The -1 term in the above equation can usually be neglected. The exponential term is usually >> 1 except for voltages below 100 mV. Further, at low voltages, the light generated ...The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage . This relationship is the diode I-V characteristic : , where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A). Question: Problem C1 (a) Which of the following assumptions is not invoked in deriving the ideal diode equation? (i) No recombination-generation in the depletion region. (ii) Low-level injection. (iii) Narrow-base diode; i.e., the n and p quasineutral widths are much less than the respective minority carrier diffusion lengths.Real diode, not an ideal diode IB −IE VBE + − VCE + − C Department of EECS University of California, Berkeley EECS 105 Spring 2004, Lecture 22 Prof. J. S. Smith Ebers-Moll Equations Exp. 6: measure E-M parameters Derivation: Write emitter and collector currents in terms of internal currents at two junctions (VV V VBE th BC th//11) ( )

1.. IntroductionSolving the equation for the current–voltage characteristics of non-ideal diodes with either (or both) series or shunt parasitic resistances has traditionally been approached through the use of iteration or analytic approximations [1], [2], [3] due to the absence of explicit solutions containing only common elementary functions.16 Apr 2020 ... Posts about ideal diode equation written by Invariance, MDASHF [email protected] the system is simple and the resultant equations are linear homogeneous ordinary differential equation with constant coefficients than their solution (in one dimensional case) would have exponent-like behavior (like many other diff. eq. in electromagnetism and circuit theory). 존재하지 않는 이미지입니다. 일때 이상적인 다이오드 방정식 (Ideal diode equation) 이라 한다. 이렇게 순방향에서는 큰 전류가 흐르고 역방향에서는 아주 작은 전류가 존재하는 성질은 정류기 제작에 응용된다. 하지만 이러한 작용은 공핍 영역과 바로 근접한 ...Ideal Diode Equation We have used the minority carrier diffusion equations to solve problems in semiconductors before so this will be nothing new with a couple exceptions. The situation is described here… 1. The diode is in steady-state (the voltage has been on for a long time). 2. Diode is a step junction. 3. There is no generation (G L …Ideal Diode • Let’s begin with an ideal diode and look at its characteristics. Wei ES154 - Lecture 8 4 Rectifier • One common use for diodes ... – We can approximate the diode equation for i >> IS • In reverse bias (when v << 0 by at least V T), then • In breakdown, reverse current increases rapidly… a vertical lineThe diode current equation expresses the relationship between the current flowing through the diode as a function of the voltage applied across it. Mathematically the diode current equation can be expressed as: η is the (exponential) ideality factor. T is the absolute temperature in Kelvin.

... ideal Shockley diode equation. If you are able to get measurement data from a diode which provides at least 2 current values across the diode at specific ...Elliot Alderson. 31.2k 5 29 67. Ideal diode means zero voltage drop across diode in FB ,if you are talking about 0.7V drop across diode that is in the case of constant voltage drop model of a diode, So, if D1 is RB voltage drop across it will be 10V and across D2 zero. – user204283. Jul 12, 2020 at 18:54.Electrical Engineering questions and answers. 4. (A) Stating any assumptions you make, derive the Shockley diode equation for a p-n diode. [Total 4] (B) Assume that a p-n Silicon diode (bandgap=1.12eV) is formed between an p-type and n-type material. The doping density at the n side (Nd) is one-half that of p side, and the intrinsic carrier ...The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation ...The Shockley equation with minor modifications is what is used in SPICE simulations for forward current in silicon, Schottky, and LED diodes.. The parameter list is given as (from here):. The main difference between the different types (other than the number such as Is which is quite different for an LED) is the temperature dependence of the saturation …I = IsateqVa 2kT I = I sat e q V a 2 k T. Figure 1.9.6 1.9. 6: Recombination dominated diode behavior. In general, a particular diode might have a combination of these two effects going on, and so people often use a more general form for the diode equation: I = IsateqVa nkT I = I sat e q V a n k T. where n n is called the ideality factor and is ...

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This is the ideal-diode model, but with the inclusion of “turn-on” voltage V D0 from Fig. 16.2, which has been used to approximate Shockley’s equation. The “voltage supply ” V D0 and the diode have the same polarity .The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material. The diode is non ohmic and non linear semiconductor device. The thermal voltage, or Vt of the junction, is referred to as the term kT/q describes the voltage produced within the P-N junction as a result of the action of …The formula is an example of an implicit function due to the appearance of the current, I, on both sides of the equation and requires numerical methods to solve. The effect of the series resistance on the IV curve is shown below. To generate the plot the voltage across the diode is varied thereby avoiding the need to solve an implicit equation.V D is applied forward-bias voltage across the diode. η is an ideality factor = 1 for indirect semiconductors = 2 for direct semiconductors. k is the Boltzmann’s constant. T is the temperature in Kelvin. kT/q is also known as thermal voltage (V T). At 300 K (room temperature), kT/q = 25.9 mV ≈ 26 mV. Now, the Shockley equation is given by

In LTspice, go to help topics (F1) and type in "diode" to go to the ".D Diode" topic. In there you can see parameters that you can configure. You can then add a spice directive to your model with Edit->Spice Directive and add one like the example to your model: .model MyIdealDiode D (Ron=.1 Roff=1Meg Vfwd=.4)Ideal diode equation predicts diode current approaches the saturation current as V D gets much smaller than the thermal voltage. Law of the junction still holds and predicts concentration of minority carriers at depletion-region approaches 0 under sufficient reverse bias. Ideal diode equation predicts diode current approaches the saturation current as V D gets much smaller than the thermal voltage. Law of the junction still holds and predicts concentration of minority carriers at depletion-region approaches 0 under sufficient reverse bias. A mathematically idealized diode refers to an ideal diode. In this type of an ideal diode, the current flowing is equal to zero when the diode is reverse biased. The characteristic of an ideal diode is to conduct at 0V when a positive voltage is applied and the current flow would be infinite and diode behaves like a short circuit.“ideal diode equation” “Shockley diode equation” I=I 0 e (qV Ak BT−1) 1) Why does the current increase exponentially with the applied forward bias? 2) Why is the reverse bias …Physical Characteristics. When not illuminated by a light source, such as the sun, the current running through a p - n junction diode can be calculated with the ideal diode equation: i ( v) = IS [exp ( v / η VT) - 1]. Although the ideal diode equation treats the reverse saturation current, IS, as a constant, it is actually a function of ... The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation ...known as the ideal diode equation. Subsequent sections carry out the mathematical details of the solution outlined in the present section. The reader is again reminded of the explicit relationship between th;; P-Il junction . diode and the myriad of other solid state devices, and that a thorough understar.ding of “ideal diode equation” “Shockley diode equation” I=I 0 e (qV Ak BT−1) 1) Why does the current increase exponentially with the applied forward bias? 2) Why is the reverse bias …Forward Current Equation of PN Junction Diode. The diode equation is given as. I D = I S (e qV D /NkT – 1) Here, I D = diode current in amps. I S = Saturation current in amps (1 x 10-12 amps) e = Euler’s constant (∼ 2.718281828) q = Charge of electron (1.6 x 10-19 coulombs) V D = Voltage applied across the diode in volts. N = Emission ...The diode is non ohmic and non linear semiconductor device. The thermal voltage, or Vt of the junction, is referred to as the term kT/q describes the voltage produced within the P-N junction as a result of the action of …Ideally, this figure would be zero: the diode providing no opposition whatsoever to forward current. In reality, the forward voltage is described by the “diode equation.” Maximum (average) forward current = I F(AV), the maximum average amount of current the diode is able to conduct in forward bias mode. This is fundamentally a thermal ...

Consider the circuit shown in figure 1. Let.Vps = 3.5 V, R =2 kohms, and IS=10 -12 A. Determine V D and I D, using the ideal diode equation and the iteration method. Draw diode and load line characteristics. The power supply (inpu0) voltage in the circuit of figure 1 is V PS = 5 and the diode cut-in voltage is Vv = 0.6 V (assume rf = 0).

Ideal Diode Equation Derivation. The ideal diode equation is one of the most basic equations in semiconductors and working through the derivation provides a solid …For all problems, use the device parameters provided in Chapter 3 (Tables 3.2 and 3.5) and the inside back book cover, unless otherwise mentioned. Also assume T = 300 K by default. 1. [E,SPICE,3.2.2] a. Consider the circuit of Figure 0.1. Using the simple model, with V Don = 0.7 V, solve for I D . b. Find I D and V D using the ideal diode equation.The diode is an electronic device that allows the flow of current only in one direction. It takes a p-n junction to allow current flow in one direction. The Shockley diode finds the I-V relationship (Current and Voltage). The Shockley diode equation can be used for both ideal and real (imperfect) diodes. So, it is also called the diode law.By the Shockley diode equation, the current diverted through the diode is: = {⁡ []} where I 0, reverse saturation current (ampere) n, diode ideality factor (1 for an ideal diode) q, elementary charge; k, Boltzmann constant The value of reverse resistance is very large as compared to forward resistance. The ratio of reverse to forward resistance is 1 00 000 : 1 for silicon diodes, whereas it is 40 000 : 1 for germanium diode. An actual diode offers a very small resistance when forward biased, Whereas it offers a very high resistance (not infinite) when reverse ...This is the ideal-diode model, but with the inclusion of “turn-on” voltage V D0 from Fig. 16.2, which has been used to approximate Shockley’s equation. The “voltage supply ” V D0 and the diode have the same polarity .The inset shows a comparison between the calculated current for a MIM diode, Equation (19), with ϕ b –b=0.3 V (red line) and the current calculated with the classical Shockley equation using an ...• Applying a potential to the ends of a diode does NOT increase current through drift • The applied voltage upsets the steady-state balance between drift and diffusion, which can unleash the flow of diffusion current • “Minority carrier device” n p eV bi n n E +eV a E F c p -eV a p eV bi p E v n −e(V bi −V a) −e(V −V) bi a n k ...The i-v characteristics of a diode closely follow this equation during operation in forward bias: The same equation can be the basis for plotting the i-v characteristics of a practical diode. Note: the scale has been compressed and expanded appropriately for the purpose of explanation. ... For a normal diode, operation in such conditions should ...How do we Analysis a Circuit with an Ideal Diode • For a real diode we use load line (graphical analysis) • For an ideal diode, we use a deductive method: 1. Assume a set of states for the diodes 2. Solve the circuit to find the currents, i D, of diodes assumed to ON and the voltages, v D, of the diodes assume to be OFF 3. Check to see if i D

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1. In a PN junction diode, the reverse saturation current is due to the diffusive flow of minority electrons from the p-side to the n-side and the minority holes from the n-side to the p-side. Hence, the reverse saturation current depends on the diffusion coefficient of electrons and holes. The minority carriers are thermally generated so the ...1/25/2012 section3_1The_Ideal_Diode 1/2 Jim Stiles The University of Kansas Dept. of EECS 4.1 The Ideal Diode Reading Assignment: pp.165-172 Before we get started with ideal diodes, let’s first recall linear device behavior! HO: LINEAR DEVICE BEHAVIOR Now, the ideal diode is our first “electronic” circuit device. Solution. The only equation left to solve is Poisson’s Equation, with n (x) and p (x) =0, abrupt doping profile and ionized dopant atoms. Poisson’s equation then becomes: the depletion region in the p- and n-type side respectively, measured from the physical junction between the two materials. The integration constants C1 and C2 can be ...5 Agu 2019 ... Consider a non-ideal diode with standard diode equation iD =iS[ exp (vD/vT)-1]. iD=1.7mA,if vD is changed by 2mVolts then what will be th ...type of diode. The reverse-breakdown voltage of power diodes may range from as low as 50 V up to 1000 V or even much more. The Diode Equation: The equation below gives a reasonably good representation of the i-v characteristics of a diode. ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = T −1 D nV v iD IS e2.4 Poisson equations, Continuity equations, Current flow equations 1 2.5 Diffusion length, Gradient of quasi Fermi level 1 2.6 TUTORIAL 2 3 MODULE 3 3.1 PN junctions : Contact potential, Electrical Field, Potential and Charge distribution at the junction, Biasing and Energy band diagrams, 2 3.2 Ideal diode equation 1zIn the last lecture, we discussed the ideal diode equation, and how it treats the minority carriers as if they always make it all the way across the junction, but then disappear once they have gotten across (we didn’t account for the possibility that they wandered back, for instance) zNow, we will more accurately account for theNon-Ideal Diode Equation equation gives an expression for the current through a non-ideal diode as a function of voltage and is represented as I 0 = I o *(e^(([Charge-e] * V d)/(Π * [BoltZ] * T))-1) or Non Ideal Diode Current = Reverse Saturation Current *(e^(([Charge-e] * Diode Voltage)/(Ideality Factor * [BoltZ] * Temperature))-1).Reverse Saturation Current …The current through the diode is given by Shockley's equation: and . Combining the above equations give the PV cell (module) characteristic equation: ... (1 for ideal diode) q - elementary charge = (1.602176565×10 −19), C T – p-n junction absolute temperature, K V T - thermal voltage, V ... ….

ideality factor is an ideal diode equation; to make it act like an real diode it must follow recombination mechanism in which recombination is different at different location in junction point. To deviate diode equation from ideality it requires ideality factor represented as a2 in equation (3), where as equation (2) is an ideal diode equation ...Electrical Engineering. Electrical Engineering questions and answers. Assume a PN junction is operating according to the ideal diode equation. At room temperature, the current of a PN junction at 0.15V is about 1uA. If you want to increase the current to 100 A, what voltage should you apply to the diode?The diode equation is usually approximated by two somewhat simpler equations, depending upon whether the diode is forward or reverse biased: I ≃ {0 if Va < 0 IsateqVa kT if Va > 0 I ≃ { 0 if V a < 0 I sat e q V a k T if V a > 0. For reverse bias, as we said, the current is essentially nil.By the Shockley diode equation, the current diverted through the diode is: = {⁡ []} where I 0, reverse saturation current (ampere) n, diode ideality factor (1 for an ideal diode) q, elementary charge; k, Boltzmann constantFeb 24, 2012 · The diode current equation expresses the relationship between the current flowing through the diode as a function of the voltage applied across it. Mathematically the diode current equation can be expressed as: η is the (exponential) ideality factor. T is the absolute temperature in Kelvin. The ideal diode equation We showed before that the current densities J e and J h , measured at the edge of the depletion region, each have a value that depends exponentially on diode voltage. Since the total current is the sum of these two components, the total diode current has this same functional dependence.A typical value for I S in silicon is 10 − 12 A , ( 1 picoampere). For germanium diodes, a typical value for I S is 10 − 6 A , ( 1 microampere). It is best to think of this diode equation as a model of a diode, rather than as a law. The equation represents an abstract ideal diode.Large-signal modelling Shockley diode model. The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A). Ideal diode equation, The value of reverse resistance is very large as compared to forward resistance. The ratio of reverse to forward resistance is 1 00 000 : 1 for silicon diodes, whereas it is 40 000 : 1 for germanium diode. An actual diode offers a very small resistance when forward biased, Whereas it offers a very high resistance (not infinite) when reverse ..., The ideal diode equation Ideal Diodes The diode equation gives an expression for the current through a diode as a function of voltage. The Ideal Diode Law: where: I = the net current flowing through the diode; I 0 = "dark saturation current", the diode leakage current density in the absence of light; V = applied voltage across the terminals of ..., The Ideal Diode Equation: Diodes should be familiar to us by now. We use them when we need current to flow in only one direction. The question is, just how much current is there? Of course, we can just give you the equation to figure it out, but what good will that do? Instead let's derive it!, By the Shockley diode equation, the current diverted through the diode is: = {⁡ []} where I 0, reverse saturation current (ampere) n, diode ideality factor (1 for an ideal diode) q, elementary charge; k, Boltzmann constant, product voltage times current gives instan taneous power across the diod e, whether ON or OFF. Th e average power dissipated in the diode could be summarize in Formula 1.1 1.1 where VF is the forward voltage when the diode is ON and the current flow is IF. IR is the current through the diode when the reverse voltage is V R. The weighted average ..., The current-voltage characteristics of organic heterojunctions (HJs) are often modeled using the generalized Shockley equation derived for inorganic diodes. However, since this description does not rigorously apply to organic semiconductor donor-acceptor (D-A) HJs, the extracted parameters lack a clear physical meaning. Here, we derive the current density-voltage $(J\\text{\\ensuremath{-}}V ..., Solution. The only equation left to solve is Poisson’s Equation, with n (x) and p (x) =0, abrupt doping profile and ionized dopant atoms. Poisson’s equation then becomes: the depletion region in the p- and n-type side respectively, measured from the physical junction between the two materials. The integration constants C1 and C2 can be ... , The Ideal Diode Law, expressed as: I = I 0 ( e q V k T − 1) where: I = the net current flowing through the diode; I0 = "dark saturation current", the diode leakage current density in the absence of light; V = applied voltage across the terminals of the diode; q = absolute value of electron charge; k = Boltzmann's constant; and , Solution : We shall use Thevenin’s theorem to find current in the diode. Referring to Fig. 2 (i), Fig. 2 (ii) shows Thevenin’s equivalent circuit. Since the diode is ideal, it has zero resistance. Q3. Calculate the current through 48 Ω resistor in the circuit shown in Fig. 3 (i). Assume the diodes to be of silicon and forward resistance of ..., 6 Agu 2021 ... ... ideal diode, working, characteristics, equation, and differences. Here are a few questions for you, what are the benefits of using this diode?, 8/22/2005 The Junction Diode Forward Bias Equation.doc 4/6 Jim Stiles The Univ. of Kansas Dept. of EECS The above statement completely specifies the performance of this particular junction diode—we can now determine the current flowing through this diode for any other value of diode voltage v D. Likewise, we can find the voltage across the diode, Real diode, not an ideal diode IB −IE VBE + − VCE + − C Department of EECS University of California, Berkeley EECS 105 Spring 2004, Lecture 22 Prof. J. S. Smith Ebers-Moll Equations Exp. 6: measure E-M parameters Derivation: Write emitter and collector currents in terms of internal currents at two junctions (VV V VBE th BC th//11) ( ), Diodes: An ideal diode is a device that allows current to flow in only one direction. The symbol of a diode, shown in figure A-1, looks like an arrow that points in the direction of current flow. ... The Diode Equation: The equation below gives a reasonably good representation of the i-v characteristics, The ideality factor is derived from the slope of the dark-IV, Suns-Voc and ocassionally the Light-IV curve. The basic cell equation in the dark is: , where I is the current through the diode, V is ..., I S, Vₜ, and n are what we would call "diode parameters" or diode characteristics predefined by the manufacturer: Emission coefficient (n), also known as ideality factor or quality factor, represents how the diode differs from an ideal diode. It accounts for imperfect junctions, and its value ranges from 1 ("ideal" diode) to a maximum of ..., The average diode current is equal to the output current. The maximum reverse voltage is equal to the output voltage. Up to 100 volts DC of reverse blocking, I always select Schottky diodes for their low forward voltage drop, and their near zero reverse recovery loss. Schottkys are available up to 200 volts DC, but with a lot less selection., The exponential identical factor is the nearness of ideal diode, how accurately the diode follows the ideal diode equation. If the identical factor is 1 the diode is almost same as ideal diode. The identical factor for germanium is 1 diode and 2 silicon diode. This factor are depends on the following factor which are mention below-Electron Drift, For all problems, use the device parameters provided in Chapter 3 (Tables 3.2 and 3.5) and the inside back book cover, unless otherwise mentioned. Also assume T = 300 K by default. 1. [E,SPICE,3.2.2] a. Consider the circuit of Figure 0.1. Using the simple model, with V Don = 0.7 V, solve for I D . b. Find I D and V D using the ideal diode equation. , The current in the pn junction diode can only flow from one side to the other. An Ideal pn junction diode is based on the following basic assumption: The diode is in steady state conditions. The doping of the diode is a nondegenerately doped step junction. The diode is 1-D (one dimension). The quasineutral regions are in low-level injection., An ideal diode consists of two terminals like a normal diode. The connections of component’s end and terminals are polarized. It is important to know that not to combine the connections on a diode up. The two terminals of an ideal diode are called the anode and cathode where anode is positive and cathode is negative., This way, the recombination process causes the diode not to follow the ideal diode equation. In an ideal diode, n=1, the slope is about 18mv per octave (2X) of current change or 60mv per decade (10X) of current change at 27 degree C. whereas, in a non-ideal diode with a n=2, the slope is about 36mv per octave (2X) of current change or 120mv per ..., Preamble It can be shown that the reverse saturation current in a diode is given by the equation: Is= BT^(2/3) exp (-Eg/NkT) where B is a constant that ..., “ideal diode equation” “Shockley diode equation” I=I 0 e (qV Ak BT−1) 1) Why does the current increase exponentially with the applied forward bias? 2) Why is the reverse bias …, The current through the diode is given by Shockley's equation: and . Combining the above equations give the PV cell (module) characteristic equation: ... (1 for ideal diode) q - elementary charge = (1.602176565×10 −19), C T – p-n junction absolute temperature, K V T - thermal voltage, V ..., AN604 Diode forward characteristics Doc ID 3607 Rev 3 5/12 For any junction temperature VT0(Tj), RD(Tj) and the forward voltage drop VF(IF,Tj) can be calculated as follow: Equation 5 Equation 6 Equation 7 Where αVTO and αRD are thermal coefficients calculated from the 2 reference temperatures: Tjref1 and Tjref2.A common choice of …, The pnJunction Diode--Uses: Rectification, parts of transistors, light-emitting diodes and lasers, solar cells, electrically variable capacitor (varactor diode), voltage reference (zenerdiode) Depletion region & junction capacitance I-Vcharacteristic Circuit applications and analysis Reference Reading Hambley, Chapter 10.1 to 10.4, The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation ..., Diodes News: This is the News-site for the company Diodes on Markets Insider Indices Commodities Currencies Stocks, The vector equation of a line is r = a + tb. Vectors provide a simple way to write down an equation to determine the position vector of any point on a given straight line. In order to write down the vector equation of any straight line, two..., The ideal diode equation assumes that all the recombination occurs via band to band or recombination via traps in the bulk areas from the device (i.e. not in the junction). Using that assumption the derivation produces the ideal diode equation below and the ideality factor, n, is equal to one. However recombination does occur in other ways and ..., Diode Equation In the forward-biased and reversed-biased regions, the current (I f I f), ... Ideal Diode Model:Diode is a simple switch that is either closed (conducting) or open (non conducting). Specifically, the diode is a short circuit, like a closed switch, when voltage is applied in the forward direction, and an open circuit, like an open ..., The first reference is another post: Voltage across diode, Shockley equation. This references Ken Kuhn's Diode Characteristics whitepaper and the whitepaper references the diode_plots.xls workbook that he created to go along with the whitepaper. This workbook has all of the calculations (the ones we were missing that I will describe shortly ..., 1/25/2012 section3_1The_Ideal_Diode 1/2 Jim Stiles The University of Kansas Dept. of EECS 4.1 The Ideal Diode Reading Assignment: pp.165-172 Before we get started with ideal diodes, let’s first recall linear device behavior! HO: LINEAR DEVICE BEHAVIOR Now, the ideal diode is our first “electronic” circuit device.